Highly Efficient and Thermally Stable Blue-Emitting AlN:Eu<sup>2+</sup> Phosphor for Ultraviolet White Light-Emitting Diodes

DOI Web Site 被引用文献9件
  • Kazuo Inoue
    Nitride Particle Group, Nano Ceramics Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
  • Naoto Hirosaki
    Nitride Particle Group, Nano Ceramics Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
  • Rong-Jun Xie
    Nitride Particle Group, Nano Ceramics Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
  • Takashi Takeda
    Nitride Particle Group, Nano Ceramics Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan

この論文をさがす

説明

An Eu2+-activated AlN phosphor was synthesized by firing the powder mixture of AlN, α-Si3N4, and Eu2O3 at 1500−2050 °C for 4 h under 1.0 MPa N2. The phase purity, photoluminescent properties, thermal quenching, and quantum efficiency of the fired samples were investigated. A single AlN wurtzite phase was formed at low doping concentrations of Eu2+ (≤0.1 mol %) and Si (≤2.2 mol %). The introduction of Si is essential for the solubility of Eu2+ in the AlN lattice. Intense blue luminescence with a peak emission wavelength of 465 nm was observed in AlN:Eu2+, when Si was doped simultaneously. This blue phosphor shows a small thermal quenching, retaining the luminance of 90% at 150 °C. The absorption and external quantum efficiencies of AlN:Eu2+ are 63%μ and 46% upon 365 nm excitation, respectively. These results indicate that AlN:Eu2+ has great potential as a blue phosphor for white light-emitting diodes (LEDs) utilizing UV chips as the light source.

収録刊行物

被引用文献 (9)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ