The electronic properties of plasma-deposited films of hydrogenated amorphous SiN<i>x</i> (0&lt;<i>x</i>&lt;1.2)

DOI PDF 被引用文献7件
  • A. J. Lowe
    Department of Physical Chemistry, University of Cambridge, Cambridge, United Kingdom
  • M. J. Powell
    Philips Research Laboratories, Redhill, Surrey, United Kingdom
  • S. R. Elliott
    Department of Physical Chemistry, University of Cambridge, Cambridge, United Kingdom

書誌事項

公開日
1986-02-15
DOI
  • 10.1063/1.336513
公開者
AIP Publishing

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<jats:p>We present the results of a comprehensive series of measurements on glow-discharge (plasma) -deposited silicon nitride films SiNx:H, with x in the range 0&lt;x&lt;1.2. Optical spectroscopy in the visible and infrared regions is used to investigate the nature of the bonding and to assess the role of hydrogen. With increasing x, in the range x&lt;0.7, an increase in the concentration of Si-H bonds results in an increase in the total hydrogen content; at higher x the rise in the N-H concentration produces a small increase in the hydrogen content, but even for these samples most of the hydrogen is bonded to silicon. The optical absorption edge due to band-gap transitions broadens with increasing x due to a change in the nature of the valence band from Si-Si bonds to N lone-pair states. Electrical conductivity at high fields and magnetic resonance measurements give information about the defects in the band gap. These results support the Robertson–Powell model in which the principal defect in the band gap of silicon nitride is the silicon dangling bond.</jats:p>

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