On the Influence of the Surface Pretreatment on the Photocurrent‐Voltage Characteristics and the Spectral Response of the n‐GaAs/Electrolyte Interface

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<jats:title>Abstract</jats:title><jats:p>A comparative study was made on the photocurrent of etched and mechanically polished n‐GaAs single crystal electrodes. The photocurrent was investigated as a function of voltage, light intensity and wavelength. The results indicate that polishing creates defects which act as recombination centres. Spectral response measurements yield information on the spatial distribution of the defects involved and on the diffusion length of the holes.</jats:p>

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