Epitaxial growth of high mobility Cu2O thin films and application to p-channel thin film transistor

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  • Kosuke Matsuzaki
    Tokyo Institute of Technology 1 Materials and Structures Laboratory, , Mailbox R3-1, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • Kenji Nomura
    Tokyo Institute of Technology 2 ERATO-SORST, Japan Science and Technology Agency (JST), Frontier Research Center, , Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • Hiroshi Yanagi
    Tokyo Institute of Technology 1 Materials and Structures Laboratory, , Mailbox R3-1, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • Toshio Kamiya
    Tokyo Institute of Technology 1 Materials and Structures Laboratory, , Mailbox R3-1, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • Masahiro Hirano
    Tokyo Institute of Technology 2 ERATO-SORST, Japan Science and Technology Agency (JST), Frontier Research Center, , Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • Hideo Hosono
    Tokyo Institute of Technology 1 Materials and Structures Laboratory, , Mailbox R3-1, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

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<jats:p>Cu 2 O epitaxial films were grown for high mobility p-channel oxide thin-film transistors (TFTs). The use of a (110) MgO surface and fine tuning of a growth condition produced single phase epitaxial films with hole Hall mobilities ∼90 cm2 V−1 s−1 comparable to those of single crystals (∼100 cm2 V−1 s−1). TFTs using the epitaxial film channels exhibited p-channel operation although the field-effect mobilities and the on-to-off current ratio were not yet satisfactory (∼0.26 cm2 V−1 s−1 and ∼6, respectively).</jats:p>

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