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- P. Visconti
- Virginia Commonwealth University, Department of Electrical Engineering and Physics Department, Richmond, Virginia 23284
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- K. M. Jones
- Virginia Commonwealth University, Department of Electrical Engineering and Physics Department, Richmond, Virginia 23284
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- M. A. Reshchikov
- Virginia Commonwealth University, Department of Electrical Engineering and Physics Department, Richmond, Virginia 23284
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- R. Cingolani
- Virginia Commonwealth University, Department of Electrical Engineering and Physics Department, Richmond, Virginia 23284
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- H. Morkoç
- Virginia Commonwealth University, Department of Electrical Engineering and Physics Department, Richmond, Virginia 23284
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- R. J. Molnar
- Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, Massachusetts 02420-9108
書誌事項
- 公開日
- 2000-11-27
- DOI
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- 10.1063/1.1329330
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>Defects in GaN layers grown by hydride vapor-phase epitaxy have been investigated by photoelectrochemical (PEC) etching, and by wet etching in hot H3PO4 acid and molten potassium hydroxide (KOH). Threading vertical wires (i.e., whiskers) and hexagonal-shaped etch pits are formed on the etched sample surfaces by PEC and wet etching, respectively. Using atomic-force microscopy, we find the density of “whisker-like” features to be 2×109 cm−2, the same value found for the etch-pit density on samples etched with both H3PO4 and molten KOH. This value is comparable to the dislocation density obtained in similar samples with tunneling electron microscopy, and is also consistent with the results of Youtsey and co-workers [Appl. Phys. Lett. 73, 797 (1998); 74, 3537 (1999)].</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 77 (22), 3532-3534, 2000-11-27
AIP Publishing