Tutorial: Organic field-effect transistors: Materials, structure and operation

DOI PDF Web Site 被引用文献7件
  • Zachary A. Lamport
    Department of Physics and Center for Functional Materials, Wake Forest University , 1834 Wake Forest Rd., Winston Salem, North Carolina 27109, USA
  • Hamna F. Haneef
    Department of Physics and Center for Functional Materials, Wake Forest University , 1834 Wake Forest Rd., Winston Salem, North Carolina 27109, USA
  • Sajant Anand
    Department of Physics and Center for Functional Materials, Wake Forest University , 1834 Wake Forest Rd., Winston Salem, North Carolina 27109, USA
  • Matthew Waldrip
    Department of Physics and Center for Functional Materials, Wake Forest University , 1834 Wake Forest Rd., Winston Salem, North Carolina 27109, USA
  • Oana D. Jurchescu
    Department of Physics and Center for Functional Materials, Wake Forest University , 1834 Wake Forest Rd., Winston Salem, North Carolina 27109, USA

書誌事項

公開日
2018-08-17
DOI
  • 10.1063/1.5042255
公開者
AIP Publishing

この論文をさがす

説明

<jats:p>Chemical versatility and compatibility with a vast array of processing techniques has led to the incorporation of organic semiconductors in various electronic and opto-electronic devices. One such device is the organic field-effect transistor (OFET). In this tutorial, we describe the structure, operation, and characterization of OFETs. Following a short historical perspective, we introduce the architectures possible for OFETs and then describe the device physics and the methods for extracting relevant device parameters. We then provide a brief overview of the myriad organic semiconductors and deposition methods that were adopted for OFETs in the past decades. Non-ideal device characteristics, including contact resistance, are then discussed along with their effects on electrical performance and on the accuracy of extracting device parameters. Finally, we highlight several measurements involving OFETs that allow access to fundamental properties of organic semiconductors and the mechanism of charge transport in these materials.</jats:p>

収録刊行物

被引用文献 (7)*注記

もっと見る

問題の指摘

ページトップへ