GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications

詳細情報 詳細情報について

• CRID

  1361137045203570048

• DOI

  10.1016/0022-0248(81)90272-4

• ISSN

  00220248

• Web Site

  https://api.elsevier.com/content/article/PII:0022024881902724?httpAccept=text/xml

  https://api.elsevier.com/content/article/PII:0022024881902724?httpAccept=text/plain

• データソース種別

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