Characteristics of high Al content Al Ga1−N grown by metalorganic chemical vapor deposition
書誌事項
- 公開日
- 2007-08
- 権利情報
-
- https://www.elsevier.com/tdm/userlicense/1.0/
- https://www.elsevier.com/legal/tdmrep-license
- https://doi.org/10.15223/policy-017
- https://doi.org/10.15223/policy-037
- https://doi.org/10.15223/policy-012
- https://doi.org/10.15223/policy-029
- https://doi.org/10.15223/policy-004
- DOI
-
- 10.1016/j.mejo.2007.07.090
- 公開者
- Elsevier BV
この論文をさがす
収録刊行物
-
- Microelectronics Journal
-
Microelectronics Journal 38 (8-9), 838-841, 2007-08
Elsevier BV