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- O. Kryliouk
- University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611
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- H. J. Park
- University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611
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- H. T. Wang
- University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611
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- B. S. Kang
- University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611
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- T. J. Anderson
- University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611
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- F. Ren
- University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611
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- S. J. Pearton
- University of Florida Department of Materials Science and Engineering, , Gainesville, Florida 32611
書誌事項
- 公開日
- 2005-08-15
- DOI
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- 10.1116/1.2008268
- 公開者
- American Vacuum Society
この論文をさがす
説明
<jats:p>Single crystal InN nanorods were successfully grown on c-Al2O3 by hydride-metalorganic vapor phase epitaxy. The measured resistance of bare InN nanorods does not change upon exposure to hydrogen ambient. The addition of sputter-deposited clusters of Pt onto the surface of the InN nanorods, however, produced a significant change in the measured room temperature resistance. The measured resistance changed systematically by 0.5%–12% as the ambient hydrogen concentration in N2 was varied between 10 and 250 ppm after 15 min exposure time. Importantly, a relatively low power consumption of ∼0.3mW was measured under these conditions. There was no response at room temperature to O2, N2O, or NH3 exposures.</jats:p>
収録刊行物
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- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 23 (5), 1891-1894, 2005-08-15
American Vacuum Society