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- Lan Meng
- Beijing Normal University 1 Department of Physics, , Beijing 100875, People’s Republic of China
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- Yanfeng Zhang
- Peking University 2 College of Engineering, , Beijing 100871, People’s Republic of China
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- Wei Yan
- Beijing Normal University 1 Department of Physics, , Beijing 100875, People’s Republic of China
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- Lei Feng
- Beijing Normal University 1 Department of Physics, , Beijing 100875, People’s Republic of China
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- Lin He
- Beijing Normal University 1 Department of Physics, , Beijing 100875, People’s Republic of China
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- Rui-Fen Dou
- Beijing Normal University 1 Department of Physics, , Beijing 100875, People’s Republic of China
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- Jia-Cai Nie
- Beijing Normal University 1 Department of Physics, , Beijing 100875, People’s Republic of China
書誌事項
- 公開日
- 2012-02-27
- DOI
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- 10.1063/1.3691952
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>We report scanning tunneling microscopy and scanning tunneling spectroscopy (STS) of twisted graphene bilayer on SiC substrate. For twist angle ∼4.5°, the Dirac point ED is located about 0.40 eV below the Fermi level EF due to the electron doping at the graphene/SiC interface. We observed an unexpected result that the local Dirac point around a nanoscaled defect shifts towards the Fermi energy during the STS measurements (with a time scale about 100 s). This behavior was attributed to the decoupling between the twisted graphene and the substrate during the measurements, which lowers the carrier density of graphene simultaneously.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 100 (9), 2012-02-27
AIP Publishing