High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs
書誌事項
- 公開日
- 2010-01
- 権利情報
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- https://www.elsevier.com/tdm/userlicense/1.0/
- https://www.elsevier.com/legal/tdmrep-license
- DOI
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- 10.1016/j.cap.2009.12.021
- 公開者
- Elsevier BV
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説明
Abstract An Fe-based perpendicular alloy with small damping constant was applied to an MTJ storage layer and small switching current of 9 μA was obtained for a write current width of 5 ms. The efficiency of spin transfer torque writing was proved to be higher than those for in-plane MTJs. The estimated Ic for the MTJ with 50 nsec pulse width is lower than 20 μA and smaller than the drive currents of CMOS transistor at Gbits density.
収録刊行物
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- Current Applied Physics
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Current Applied Physics 10 (1), e87-e89, 2010-01
Elsevier BV
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詳細情報 詳細情報について
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- CRID
- 1361137045434460416
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- ISSN
- 15671739
- https://id.crossref.org/issn/15671739
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- データソース種別
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- Crossref
- OpenAIRE