Doped ZnO 1D Nanostructures: Synthesis, Properties, and Photodetector Application
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- Cheng‐Liang Hsu
- Departments of Electrical Engineering National University of Tainan Tainan 700 Taiwan
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- Shoou‐Jinn Chang
- Institute of Microelectronics & Department of Electrical Engineering Advanced Optoelectronic Technology Center National Cheng Kung University Tainan 701 Taiwan
書誌事項
- 公開日
- 2014-10-15
- 権利情報
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- http://onlinelibrary.wiley.com/termsAndConditions#vor
- DOI
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- 10.1002/smll.201401580
- 公開者
- Wiley
この論文をさがす
説明
<jats:p>In the past decades, the doping of ZnO one‐dimensional nanostructures has attracted a great deal of attention due to the variety of possible morphologies, large surface‐to‐volume ratios, simple and low cost processing, and excellent physical properties for fabricating high‐performance electronic, magnetic, and optoelectronic devices. This article mainly concentrates on recent advances regarding the doping of ZnO one‐dimensional nanostructures, including a brief overview of the vapor phase transport method and hydrothermal method, as well as the fabrication process for photodetectors. The dopant elements include B, Al, Ga, In, N, P, As, Sb, Ag, Cu, Ti, Na, K, Li, La, C, F, Cl, H, Mg, Mn, S, and Sn. The various dopants which act as acceptors or donors to realize either p‐type or n‐type are discussed. Doping to alter optical properties is also considered. Lastly, the perspectives and future research outlook of doped ZnO nanostructures are summarized.</jats:p>
収録刊行物
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- Small
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Small 10 (22), 4562-4585, 2014-10-15
Wiley