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- Pascal Puech
- Laboratoire de Physique des Solides de Toulouse-IRSAMC , UMR5477, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse Cedex, France
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- François Demangeot
- Laboratoire de Physique des Solides de Toulouse-IRSAMC , UMR5477, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse Cedex, France
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- Jean Frandon
- Laboratoire de Physique des Solides de Toulouse-IRSAMC , UMR5477, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse Cedex, France
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- Claire Pinquier
- Laboratoire de Physique des Solides de Toulouse-IRSAMC , UMR5477, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse Cedex, France
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- Martin Kuball
- H. H. Wills Physics Laboratory, University of Bristol , Bristol BS8 1TL, United Kingdom
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- Vladislav Domnich
- Department of Materials Science and Engineering , 3141 Chetsnut Street, Drexel University, Philadelphia, Pennsylvania 19104.
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- Yury Gogotsi
- Department of Materials Science and Engineering , 3141 Chetsnut Street, Drexel University, Philadelphia, Pennsylvania 19104.
書誌事項
- 公開日
- 2004-09-01
- DOI
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- 10.1063/1.1775295
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>We have investigated strain fields around GaN nanoindentations. Stress relaxation around the edges of the nanoindentation was evident in atomic force microscopy images. More detailed information on the strain fields was obtained from Raman scattering, which has been used to analyze the shape of the strain field around the indentation. We find that the Berkovich tip giving a triangular imprint on the sample generates a strain field, which represents a hexagonal pattern. Negative values of the strain indicate that the residual stress is compressive. Strain is larger in the center of the indentation than outside. Analysis of the ratio of the frequency shift of the E2 and A1(LO) modes suggests that the residual strains are close to biaxial state outside the indentation contact zone, and mostly hydrostatic within the indentation center.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 96 (5), 2853-2856, 2004-09-01
AIP Publishing
