AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction
書誌事項
- 公開日
- 2013-10
- 権利情報
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- https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
- DOI
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- 10.1109/ted.2013.2271954
- 公開者
- Institute of Electrical and Electronics Engineers (IEEE)
この論文をさがす
収録刊行物
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- IEEE Transactions on Electron Devices
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IEEE Transactions on Electron Devices 60 (10), 3119-3131, 2013-10
Institute of Electrical and Electronics Engineers (IEEE)