Strong non-Arrhenius temperature dependence of the resistivity in the regime of traditional band transport
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- C. Michel
- Philipps-University Department of Physics and Material Sciences Center, , Renthof 5, 35032 Marburg, Germany
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- S. D. Baranovskii
- Philipps-University Department of Physics and Material Sciences Center, , Renthof 5, 35032 Marburg, Germany
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- P. J. Klar
- Philipps-University Department of Physics and Material Sciences Center, , Renthof 5, 35032 Marburg, Germany
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- P. Thomas
- Philipps-University Department of Physics and Material Sciences Center, , Renthof 5, 35032 Marburg, Germany
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- B. Goldlücke
- MPI for Computer Science , Stuhlsatzenhausweg 85, 66123 Saarbrücken, Germany
書誌事項
- 公開日
- 2006-09-11
- DOI
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- 10.1063/1.2348771
- 公開者
- AIP Publishing
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説明
<jats:p>When a strong, though non-Arrhenius temperature dependence of electrical resistivity is observed, one usually concludes that the underlying mechanism is variable-range hopping. Unexpectedly, such observations are also made for many semiconductor systems at elevated temperatures, where a variable-range hopping mechanism seems unlikely. A satisfactory explanation for this observation is still lacking up to now. The authors demonstrate that a non-Arrhenius resistivity behavior may also arise in a band transport picture by thermal activation of charge carriers from a reservoir into the transport-carrying band states, provided the energy distribution of reservoir states is sufficiently broadened or the density of band states exhibits tails.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 89 (11), 2006-09-11
AIP Publishing