Mechanisms of B deactivation control by F co-implantation

N. E. B. Cowern, B. Colombeau, J. Benson, A. J. Smith, W. Lerch, S. Paul, T. Graf, F. Cristiano, X. Hebras, D. Bolze

doi:10.1063/1.1870131

Mechanisms of B deactivation control by F co-implantation

DOI PDF 被引用文献1件

N. E. B. Cowern

Advanced Technology Institute, University of Surrey , Guildford, Surrey GU2 7XH, United Kingdom
B. Colombeau

Advanced Technology Institute, University of Surrey , Guildford, Surrey GU2 7XH, United Kingdom
J. Benson

Advanced Technology Institute, University of Surrey , Guildford, Surrey GU2 7XH, United Kingdom
A. J. Smith

Advanced Technology Institute, University of Surrey , Guildford, Surrey GU2 7XH, United Kingdom
W. Lerch

Mattson Thermal Products GmbH , Daimlerstr. 10, D-89160 Dornstad, Germany
S. Paul

Mattson Thermal Products GmbH , Daimlerstr. 10, D-89160 Dornstad, Germany
T. Graf

Mattson Thermal Products GmbH , Daimlerstr. 10, D-89160 Dornstad, Germany
F. Cristiano

LAAS-CNRS , 7 avenue du Colonel Roche, 31077 Toulouse, France
X. Hebras

LAAS-CNRS , 7 avenue du Colonel Roche, 31077 Toulouse, France
D. Bolze

IHP, Im Technologiepark 25 , D-15236 Frankfurt (Oder), Germany

書誌事項

公開日: 2005-03-01

DOI

10.1063/1.1870131

公開者: AIP Publishing

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説明

<jats:p>Thermal annealing after preamorphization and solid-phase epitaxy of ultrashallow B implants leads to deactivation and diffusion driven by interstitials released from end-of-range defects. F inhibits these processes by forming small clusters that trap interstitials. A competing B–F interaction causes deactivation when F and B profiles overlap. Both pathways suppress B transient enhanced diffusion.</jats:p>