Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors

DOI PDF 被引用文献4件
  • R. Oberhuber
    Physik Department and Walter Schottky Institut, Technische Universität München, Am Coulombwall, D-85748 Garching, Germany
  • G. Zandler
    Physik Department and Walter Schottky Institut, Technische Universität München, Am Coulombwall, D-85748 Garching, Germany
  • P. Vogl
    Physik Department and Walter Schottky Institut, Technische Universität München, Am Coulombwall, D-85748 Garching, Germany

書誌事項

公開日
1998-08-10
DOI
  • 10.1063/1.122011
公開者
AIP Publishing

この論文をさがす

説明

<jats:p>We present quantitative calculations of the electron drift mobility in wurtzite (WZ) and zincblende (ZB) structure n-type AlGaN/GaN modulation-doped field-effect transistors. The two-dimensional character of the quantum confined carriers as well as spontaneous and piezoelectric electric field effects are fully taken into account. For given doping concentration, we find that the internal electric fields lead to a much stronger carrier confinement and higher channel densities than in standard III–V materials. For high quality n-type heterostructures, we predict a room temperature mobility at high densities close to 2000 cm2/V s.</jats:p>

収録刊行物

被引用文献 (4)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ