Spin Hall Effect Transistor

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  • Jörg Wunderlich
    Hitachi Cambridge Laboratory, Cambridge CB3 0HE, UK.
  • Byong-Guk Park
    Hitachi Cambridge Laboratory, Cambridge CB3 0HE, UK.
  • Andrew C. Irvine
    Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, CB3 0HE, UK.
  • Liviu P. Zârbo
    Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic.
  • Eva Rozkotová
    Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2, Czech Republic.
  • Petr Nemec
    Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2, Czech Republic.
  • Vít Novák
    Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic.
  • Jairo Sinova
    Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic.
  • Tomás Jungwirth
    Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic.

書誌事項

公開日
2010-12-24
DOI
  • 10.1126/science.1195816
  • 10.48550/arxiv.1008.2844
公開者
American Association for the Advancement of Science (AAAS)

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説明

<jats:title>In a Spin Hall</jats:title> <jats:p> The spin Hall effect, in which an electrical current causes accumulation of electron spins of opposite signs in the direction transverse to the current flow, provides a promising avenue of research in exploiting the spin degree of freedom in electronic devices. However, implementing the effect in a device is challenging. <jats:bold> Wunderlich <jats:italic>et al.</jats:italic> </jats:bold> (p. <jats:related-article xmlns:xlink="http://www.w3.org/1999/xlink" ext-link-type="doi" page="1801" related-article-type="in-this-issue" vol="330" xlink:href="10.1126/science.1195816">1801</jats:related-article> ) combine the concept of the spin Hall effect with that of a spin transistor, and build a nonmagnetic device in a which a spin current, injected by optical means, is “stripped” of its charge component, goes through a spin-modulation layer, and is detected using the inverse spin Hall effect. Such manipulation of the spin current may help in future spintronic applications. </jats:p>

収録刊行物

  • Science

    Science 330 (6012), 1801-1804, 2010-12-24

    American Association for the Advancement of Science (AAAS)

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