Silicon nanowire devices

DOI PDF 被引用文献13件
  • Sung-Wook Chung
    UCLA Department of Chemistry and Biochemistry, Los Angeles, California 90095-1569
  • Jae-Young Yu
    UCLA Department of Chemistry and Biochemistry, Los Angeles, California 90095-1569
  • James R. Heath
    UCLA Department of Chemistry and Biochemistry, Los Angeles, California 90095-1569

書誌事項

公開日
2000-04-10
DOI
  • 10.1063/1.126257
公開者
AIP Publishing

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説明

<jats:p>Transport measurements were carried out on 15–35 nm diameter silicon nanowires grown using SiH4 chemical vapor deposition via Au or Zn particle-nucleated vapor-liquid-solid growth at 440 °C. Both Al and Ti/Au contacts to the wires were investigated. The wires, as produced, were essentially intrinsic, although Au nucleated wires exhibited a slightly higher conductance. Thermal treatment of the fabricated devices resulted in better electrical contacts, as well as diffusion of dopant atoms into the nanowires, and increased the nanowire conductance by as much as 104. Three terminal devices indicate that the doping of the wires is p type.</jats:p>

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