Resistivity and thermopower of graphene made by chemical vapor deposition technique

A. V. Babichev, V. E. Gasumyants, V. Y. Butko

doi:10.1063/1.4792032

Resistivity and thermopower of graphene made by chemical vapor deposition technique

DOI PDF 被引用文献2件

A. V. Babichev

Ioffe Physical Technical Institute of the Russian Academy of Science (RAS) 1 , Polytechnicheskaya Str. 26, 194021 St. Petersburg, Russia
V. E. Gasumyants

St. Petersburg State Polytechnical University 3 , Polytechnicheskaya Str. 29, 195251 St. Petersburg, Russia
V. Y. Butko

Ioffe Physical Technical Institute of the Russian Academy of Science (RAS) 1 , Polytechnicheskaya Str. 26, 194021 St. Petersburg, Russia

書誌事項

公開日: 2013-02-20

DOI

10.1063/1.4792032

公開者: AIP Publishing

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説明

<jats:p>Understanding charge carrier transport mechanisms in graphene fabricated by chemical vapor deposition (CVD) is important for electronic and thermal applications. We report results of structural, low temperature resistivity, and thermopower measurements in approximately four atomic layer thick centimeter size graphene. A semiconducting temperature dependence of the resistivity and a metallic temperature dependence of the thermopower in the same samples have been observed. The obtained results imply that intergranular charge carrier scattering in CVD graphene plays a major role in the electrical transport and a minor role in the thermal transport.</jats:p>