Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates

DOI PDF 被引用文献1件
  • K. Kawaguchi
    Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • M. Morooka
    Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • K. Konishi
    Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • S. Koh
    Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Y. Shiraki
    Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

書誌事項

公開日
2002-07-29
DOI
  • 10.1063/1.1496142
公開者
AIP Publishing

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説明

<jats:p>SiGe microcavities with Ge dots were fabricated by employing strain-balanced SiGe/Si Bragg reflectors, and it was observed that photoluminescence from Ge dots embedded in the microcavity structure was significantly modulated due to the cavity effect. The characteristic luminescence of the microcavity was observed up to 200 K, and the thermal activation energy of the luminescence was largely improved compared with that of cavities with quantum wells.</jats:p>

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