High-mobility bottom-contact n-channel organic transistors and their use in complementary ring oscillators

  • Byungwook Yoo
    The University of Texas at Austin Microelectronics Research Center, , 10100 Burnet Road, Building 160, Austin, Texas 78758
  • Taeho Jung
    The University of Texas at Austin Microelectronics Research Center, , 10100 Burnet Road, Building 160, Austin, Texas 78758
  • Debarshi Basu
    The University of Texas at Austin Microelectronics Research Center, , 10100 Burnet Road, Building 160, Austin, Texas 78758
  • Ananth Dodabalapur
    The University of Texas at Austin Microelectronics Research Center, , 10100 Burnet Road, Building 160, Austin, Texas 78758
  • Brooks A. Jones
    Northwestern University Department of Chemistry, the Materials Research Center, and the Center for Nanofabrication & Molecular Self-Assembly, , 2145 Sheridan Road, Evanston, Illinois 60208-3113
  • Antonio Facchetti
    Northwestern University Department of Chemistry, the Materials Research Center, and the Center for Nanofabrication & Molecular Self-Assembly, , 2145 Sheridan Road, Evanston, Illinois 60208-3113
  • Michael R. Wasielewski
    Northwestern University Department of Chemistry, the Materials Research Center, and the Center for Nanofabrication & Molecular Self-Assembly, , 2145 Sheridan Road, Evanston, Illinois 60208-3113
  • Tobin J. Marks
    Northwestern University Department of Chemistry, the Materials Research Center, and the Center for Nanofabrication & Molecular Self-Assembly, , 2145 Sheridan Road, Evanston, Illinois 60208-3113

書誌事項

公開日
2006-02-20
DOI
  • 10.1063/1.2177627
公開者
AIP Publishing

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説明

<jats:p>The electrical characteristics of bottom-contact organic field-effect transistors fabricated with the air-stable n-type semiconductor N,N′-bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN2) are described. The mobility, threshold voltage, subthreshold swing, and Ion∕Ioff ratio(VDS=40V, VG=0∼40V) are 0.14cm2∕Vs, 1.6V, 2.0V/decade, and 1.2×103, respectively. The effect of electrode/dielectric surface treatment on these devices is also examined, with a combination of 1-octadecanethiol and hexamethyldisilazane. Organic complementary five-stage ring oscillators were fabricated using pentacene and PDI-8CN2, and operated at an oscillation frequency of 34kHz and a propagation delay per stage of 3μs.</jats:p>

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