Velocity of Domain-Wall Motion Induced by Electrical Current in the Ferromagnetic Semiconductor (Ga,Mn)As
書誌事項
- 公開日
- 2006-03-06
- 権利情報
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- http://link.aps.org/licenses/aps-default-license
- DOI
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- 10.1103/physrevlett.96.096601
- 10.48550/arxiv.cond-mat/0601515
- 公開者
- American Physical Society (APS)
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説明
Current-induced domain-wall motion with velocity spanning over five orders of magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin-transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.
5 pages, 3 figures
収録刊行物
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- Physical Review Letters
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Physical Review Letters 96 (9), 096601-, 2006-03-06
American Physical Society (APS)