Drift mobilities of Na+ and K+ ions in SiO2 films

DOI PDF 被引用文献3件
  • J. P. Stagg
    Philips Research Laboratories, Redhill, Surrey, England

書誌事項

公開日
1977-10-15
DOI
  • 10.1063/1.89766
公開者
AIP Publishing

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説明

<jats:p>Na+ and K+ ion mobilities in thermally grown SiO2 films have been determined from transient ion curret measurements in MOS capacitors. The mobilities were determined from the observed transit times of Na+ and K+ ions measured in the temperature ranges 40–180 °C and 230–300 °C, respectively. For Na+ ions in both a dry-grown oxide and one grown in a 10% HCl/oxygen mixture, μ=1.0 exp(−0.66 eV/kT) cm2/V sec. For K+ ions in a dry-grown oxide, μ=0.03 exp(−1.09 eV/kT) cm2/V sec.</jats:p>

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