Second-harmonic generation at 421 nm using injection-locked GaAlAs laser array and KNbO3

DOI PDF 被引用文献8件
  • M. K. Chun
    Code 6570, Naval Research Laboratory, Washington, DC 20375-5000
  • L. Goldberg
    Code 6570, Naval Research Laboratory, Washington, DC 20375-5000
  • J. F. Weller
    Code 6570, Naval Research Laboratory, Washington, DC 20375-5000

書誌事項

公開日
1988-09-26
DOI
  • 10.1063/1.100012
公開者
AIP Publishing

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説明

<jats:p>Significant improvement in frequency doubling efficiency of a cw output of a GaAlAs laser diode is described. Up to 0.72 mW of 421 nm power was generated by illuminating a KNbO3 crystal with a 270 mW diffraction-limited beam generated by an externally injection-locked laser diode array, operating in a single-mode and single-far-field lobe.</jats:p>

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