Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor
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- Yaser Banadaki
- Division of Electrical and Computer Engineering, Louisiana State University, Baton Rouge, LA 70803, USA
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- Ashok Srivastava
- Division of Electrical and Computer Engineering, Louisiana State University, Baton Rouge, LA 70803, USA
書誌事項
- 公開日
- 2016-03-18
- 権利情報
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- https://creativecommons.org/licenses/by/4.0/
- DOI
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- 10.3390/electronics5010011
- 公開者
- MDPI AG
説明
<jats:p>In this paper, we present a physics-based analytical model of GNR FET, which allows for the evaluation of GNR FET performance including the effects of line-edge roughness as its practical specific non-ideality. The line-edge roughness is modeled in edge-enhanced band-to-band-tunneling and localization regimes, and then verified for various roughness amplitudes. Corresponding to these two regimes, the off-current is initially increased, then decreased; while, on the other hand, the on-current is continuously decreased by increasing the roughness amplitude.</jats:p>
収録刊行物
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- Electronics
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Electronics 5 (1), 11-, 2016-03-18
MDPI AG