Photoluminescence and free-electron absorption in heavily phosphorus-doped Si nanocrystals

DOI Web Site Web Site 被引用文献17件

書誌事項

公開日
2000-11-15
権利情報
  • http://link.aps.org/licenses/aps-default-license
DOI
  • 10.1103/physrevb.62.12625
公開者
American Physical Society (APS)

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説明

Heavily phosphorus-doped Si nanocrystals several nanometers in diameter are studied by photoluminescence (PL) and optical absorption spectroscopy. It is demonstrated that P doping results in the quenching of the PL. The quenching is accompanied by the appearance of the optical absorption in the infrared range. The absorption was assigned to the intravalley transitions of free electrons generated by P doping (free-electron absorption). The generation of free electrons and the resultant three-body Auger recombination of excitons is considered to be responsible for the observed PL quenching.

収録刊行物

  • Physical Review B

    Physical Review B 62 (19), 12625-12627, 2000-11-15

    American Physical Society (APS)

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