Single-longitudinal-mode metalorganic chemical-vapor-deposition self-aligned GaAlAs-GaAs double-heterostructure lasers

DOI PDF 被引用文献5件
  • J. J. Coleman
    Rockwell International, Electronic Devices Division, Electronics Research Center, Anaheim, California 92803
  • P. D. Dapkus
    Rockwell International, Electronic Devices Division, Electronics Research Center, Anaheim, California 92803

説明

<jats:p>Single-mode self-aligned GaAlAs-GaAs double-heterostructure lasers have been fabricated by metalorganic chemical vapor deposition. These devices operate at low current thresholds on a single longitudinal mode and require only a single photolithographic processing step.</jats:p>

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