Graphene and Thin-Film Semiconductor Heterojunction Transistors Integrated on Wafer Scale for Low-Power Electronics
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- Jinseong Heo
- Samsung Advanced Institute of Technology, Samsung Electronics Co., 97 Samsung2-ro, Giheung-gu, Yongin-si, Gyeonggi-do 446-712, Korea
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- Kyung-Eun Byun
- Samsung Advanced Institute of Technology, Samsung Electronics Co., 97 Samsung2-ro, Giheung-gu, Yongin-si, Gyeonggi-do 446-712, Korea
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- Jaeho Lee
- Samsung Advanced Institute of Technology, Samsung Electronics Co., 97 Samsung2-ro, Giheung-gu, Yongin-si, Gyeonggi-do 446-712, Korea
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- Hyun-Jong Chung
- Samsung Advanced Institute of Technology, Samsung Electronics Co., 97 Samsung2-ro, Giheung-gu, Yongin-si, Gyeonggi-do 446-712, Korea
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- Sanghun Jeon
- Samsung Advanced Institute of Technology, Samsung Electronics Co., 97 Samsung2-ro, Giheung-gu, Yongin-si, Gyeonggi-do 446-712, Korea
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- Seongjun Park
- Samsung Advanced Institute of Technology, Samsung Electronics Co., 97 Samsung2-ro, Giheung-gu, Yongin-si, Gyeonggi-do 446-712, Korea
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- Sungwoo Hwang
- Samsung Advanced Institute of Technology, Samsung Electronics Co., 97 Samsung2-ro, Giheung-gu, Yongin-si, Gyeonggi-do 446-712, Korea
収録刊行物
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- Nano Letters
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Nano Letters 13 (12), 5967-5971, 2013-11-25
American Chemical Society (ACS)
