-
- R. Nagarajan
- Department of Chemistry and Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331
-
- A. D. Draeseke
- Department of Physics and Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331
-
- A. W. Sleight
- Department of Chemistry and Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331
-
- J. Tate
- Department of Physics and Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331
書誌事項
- 公開日
- 2001-06-15
- DOI
-
- 10.1063/1.1372636
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>CuCr 1−x Mg x O 2 , a wide band gap semiconductor with the delafossite structure, has been synthesized in bulk and thin-film form. Bulk undoped CuCrO2 is almost black and has moderate conductivity with p-type carriers. Upon doping with 5% Mg, the conductivity increases by a factor of 1000. In films, the best p-type conductivity is 220 S cm−1 in CuCr0.95Mg0.05O2, a factor of 7 higher than previously reported for Cu-based p-type delafossites. Undoped films have a conductivity of order 1 S cm−1. Films are usually polycrystalline on amorphous substrates, but undoped films can be c-axis oriented if deposited at or above 650 °C. Optical and ultraviolet transmission data indicate a direct band gap of 3.1 eV.</jats:p>
収録刊行物
-
- Journal of Applied Physics
-
Journal of Applied Physics 89 (12), 8022-8025, 2001-06-15
AIP Publishing