Semiconducting Properties of Single Crystals of <i>n</i>- and <i>p</i>-Type Tungsten Diselenide (WSe2)
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- L. C. Upadhyayula
- Division of Engineering, Brown University, Providence, Rhode Island 02912
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- J. J. Loferski
- Division of Engineering, Brown University, Providence, Rhode Island 02912
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- A. Wold
- Division of Engineering, Brown University, Providence, Rhode Island 02912
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- W. Giriat
- Division of Engineering, Brown University, Providence, Rhode Island 02912
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- R. Kershaw
- Division of Engineering, Brown University, Providence, Rhode Island 02912
書誌事項
- 公開日
- 1968-09-01
- DOI
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- 10.1063/1.1655829
- 公開者
- AIP Publishing
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説明
<jats:p>The optical absorption, photoconductivity, contact photovoltage, electrical conductivity, and Hall coefficient of single crystals of WSe2 have been studied over the temperature range 77°–295°K. It was found that the forbidden energy gap Eg was 1.35 eV at 295°K and that the temperature dependence of Eg was given by dEg/dT=−4.6×10−4 eV/°K. The material as grown by iodine vapor transport in a sealed ampule is p-type with hole mobility μh∼80 cm2/V·sec and p∼1016/cc at 295°K. The carrier concentration could be reduced by pumping out excess selenium. Doping with rhenium during the crystal growth process resulted in n-WSe2 with a carrier concentration n∼1017/cc and electron mobility μn∼100 cm2/V·sec at 295°K.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 39 (10), 4736-4740, 1968-09-01
AIP Publishing
