Gallium arsenide: A new material to accomplish passively mode-locked Nd:YAG laser

DOI PDF 被引用文献3件
  • Zhuhong Zhang
    Shanghai Institute of Optics and Fine Mechanics, Academia Sinica, P. O. Box 800-211, Shanghai 201800, People’s Republic of China
  • Liejia Qian
    Shanghai Institute of Optics and Fine Mechanics, Academia Sinica, P. O. Box 800-211, Shanghai 201800, People’s Republic of China
  • Dianyuan Fan
    Shanghai Institute of Optics and Fine Mechanics, Academia Sinica, P. O. Box 800-211, Shanghai 201800, People’s Republic of China
  • Ximing Deng
    Shanghai Institute of Optics and Fine Mechanics, Academia Sinica, P. O. Box 800-211, Shanghai 201800, People’s Republic of China

書誌事項

公開日
1992-01-27
DOI
  • 10.1063/1.106621
公開者
AIP Publishing

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説明

<jats:p>A passively mode-locked Nd:YAG laser using a semi-insulating GaAs is accomplished. Ultrashort pulses, shorter than 10 ps, with an energy of 10 μJ per pulse are obtained. The dynamics of the pulse formation is described.</jats:p>

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