Experimental investigation of a PtSi source and drain field emission transistor

DOI PDF 被引用文献6件
  • John P. Snyder
    Department of Electrical Engineering, Stanford University, Stanford, California 94305
  • C. R. Helms
    Department of Electrical Engineering, Stanford University, Stanford, California 94305
  • Yoshio Nishi
    Hewlett-Packard ULSI Research Laboratory, 3500 Deer Creek Road, Palo Alto, California 94304

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<jats:p>A p-type PtSi source and drain, no ‘‘gap,’’ metal oxide semiconductor field effect transistor (MOSFET) has been successfully fabricated and experimentally investigated in detail down to 4.2 K. Gate curves (source current versus gate voltage) clearly show that, in the ‘‘on’’ state, the current flow mechanism from the source metal into the channel gradually changes from primarily thermal emission over the small ∼0.2 eV Schottky barrier to holes to completely field emission through the triangular Schottky barrier as the temperature is lowered below ∼100 K. Gate curves for different channel lengths also show minimal short channel effects down to 1.0 μm, in agreement with previous simulations. Drain curves (source current versus drain voltage) demonstrate that the drive current is comparable to that of a conventional MOSFET, and that the Schottky barrier is rendered transparent to the flow of holes when the device is strongly ‘‘on.’’</jats:p>

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