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- C. N. R. Rao
- The authors are at the Materials Research Laboratory, University of California, Santa Barbara, CA 93106, USA. C. N. R. Rao is a visiting faculty member from the Indian Institute of Science, Bangalore 560012, India.
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- A. K. Cheetham
- The authors are at the Materials Research Laboratory, University of California, Santa Barbara, CA 93106, USA. C. N. R. Rao is a visiting faculty member from the Indian Institute of Science, Bangalore 560012, India.
書誌事項
- 公開日
- 1996-04-19
- DOI
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- 10.1126/science.272.5260.369
- 公開者
- American Association for the Advancement of Science (AAAS)
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説明
<jats:p>Some materials exhibit large changes in electrical resistance in the presence of a magnetic field, and this change can be used in applications from sensor technology to magnetic data storage. In their Perspective, Rao and Cheetham discuss magnetoresistance in perovskite manganates, where the effect is unusually strong. Much has been learned about these materials, and this understanding is driving the search for new materials with even more impressive properties.</jats:p>
収録刊行物
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- Science
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Science 272 (5260), 369-370, 1996-04-19
American Association for the Advancement of Science (AAAS)