Selective Si epitaxial growth by plasma-enhanced chemical vapor deposition at very low temperature

DOI PDF 被引用文献12件
  • K. Baert
    Interuniversity Micro-Electronics Center, Kapeldreef 75, 3001 Heverlee, Belgium
  • P. Deschepper
    Interuniversity Micro-Electronics Center, Kapeldreef 75, 3001 Heverlee, Belgium
  • J. Poortmans
    Interuniversity Micro-Electronics Center, Kapeldreef 75, 3001 Heverlee, Belgium
  • J. Nijs
    Interuniversity Micro-Electronics Center, Kapeldreef 75, 3001 Heverlee, Belgium
  • R. Mertens
    Interuniversity Micro-Electronics Center, Kapeldreef 75, 3001 Heverlee, Belgium

書誌事項

公開日
1992-01-27
DOI
  • 10.1063/1.106628
公開者
AIP Publishing

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説明

<jats:p>A rf-plasma chemical vapor deposition process for selective epitaxial Si growth from SiH4 and SiF4 at a deposition temperature of 300–400 °C is described. Selective epitaxial growth is obtained as a balance of deposition precursors versus etching by F species. Also, the results indicate that a high H-surface coverage is not essential to deposit crystalline Si films by very low temperature rf-plasma chemical vapor deposition. P-doped films with a mobility of 80 cm2/V s and a carrier concentration of 3×1018 cm−3 are reported.</jats:p>

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