Critical role of interface states for spin-dependent tunneling in half-metallic Co2MnSi-based magnetic tunnel junctions investigated by tunneling spectroscopy

Takayuki Ishikawa, Naoki Itabashi, Tomoyuki Taira, Ken-ichi Matsuda, Tetsuya Uemura, Masafumi Yamamoto

doi:10.1063/1.3083560

Critical role of interface states for spin-dependent tunneling in half-metallic Co2MnSi-based magnetic tunnel junctions investigated by tunneling spectroscopy

DOI PDF 被引用文献9件

Takayuki Ishikawa

Hokkaido University Division of Electronics for Informatics, , Sapporo 060-0814, Japan
Naoki Itabashi

Hokkaido University Division of Electronics for Informatics, , Sapporo 060-0814, Japan
Tomoyuki Taira

Hokkaido University Division of Electronics for Informatics, , Sapporo 060-0814, Japan
Ken-ichi Matsuda

Hokkaido University Division of Electronics for Informatics, , Sapporo 060-0814, Japan
Tetsuya Uemura

Hokkaido University Division of Electronics for Informatics, , Sapporo 060-0814, Japan
Masafumi Yamamoto

Hokkaido University Division of Electronics for Informatics, , Sapporo 060-0814, Japan

説明

<jats:p>We investigated at 4.2 K the differential conductance (dI/dV) versus V characteristics of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions (MTJs) featuring high tunnel magnetoresistance ratios of about 700% at 4.2 K (about 180% at room temperature). We developed a tunneling model to explain the observed tunneling spectra and showed the critical role played by interface states for minority spins existing around the Fermi level of Co2MnSi electrodes facing a MgO tunnel barrier in the spin-dependent tunneling characteristics of these MTJs with half-metallic electrodes.</jats:p>