Electronic structure of molecular beam epitaxy grown CaF2 on Si(111)

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  • U. O. Karlsson
    IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
  • F. J. Himpsel
    IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
  • J. F. Morar
    IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
  • D. Rieger
    IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
  • J. A. Yarmoff
    IBM T. J. Watson Research Center, Yorktown Heights, New York 10598

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説明

<jats:p>High resolution core level spectroscopy, polarization-dependent near edge x-ray absorption fine structure and angle-resolved photoemission have been used to study CaF2 grown by molecular beam epitaxy on Si(111). It is found that both Ca and F bond to Si at the interface and that both Ca and F-derived interface states are created. A new radiation induced ordered structure is also reported.</jats:p>

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