Strained tunnel FETs with record I<inf>ON</inf>: first demonstration of ETSOI TFETs with SiGe channel and RSD
書誌事項
- 公開日
- 2012-06
- DOI
-
- 10.1109/vlsit.2012.6242455
- 公開者
- IEEE
収録刊行物
-
- 2012 Symposium on VLSI Technology (VLSIT)
-
2012 Symposium on VLSI Technology (VLSIT) 49-50, 2012-06
IEEE