Silicon <i>pn</i> junction imaging and characterizations using sensitivity enhanced Kelvin probe force microscopy

DOI PDF 被引用文献35件
  • Atsushi Kikukawa
    Advanced Research Laboratory, Hitachi Ltd., 1-280 Higashi-koigakubo, Kokubunjishi, Tokyo 185, Japan
  • Sumio Hosaka
    Advanced Research Laboratory, Hitachi Ltd., 1-280 Higashi-koigakubo, Kokubunjishi, Tokyo 185, Japan
  • Ryo Imura
    Advanced Research Laboratory, Hitachi Ltd., 1-280 Higashi-koigakubo, Kokubunjishi, Tokyo 185, Japan

書誌事項

公開日
1995-06-19
DOI
  • 10.1063/1.113780
公開者
AIP Publishing

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説明

<jats:p>We observed the surface potential of silicon pn junctions using a Kelvin probe force microscope whose sensitivity was about five times better than that of a conventional one. It was achieved by three major improvements: electrostatic force detection using the second cantilever resonance, cantilever Q-value enhancement by operating in a vacuum, and direct cantilever resonance frequency detection using the frequency modulation technique. It was demonstrated that the surface potential of the pn junctions made by thermal diffusion varies gradually compared to those made by ion implantation, possibly reflecting their gradual dopant concentration profile.</jats:p>

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