Chemistry and band offsets of HfO2 thin films on Si revealed by photoelectron spectroscopy and x-ray absorption spectroscopy

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書誌事項

公開日
2004-07
権利情報
  • https://www.elsevier.com/tdm/userlicense/1.0/
DOI
  • 10.1016/j.elspec.2004.02.083
公開者
Elsevier BV

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説明

Abstract High-resolution photoelectron spectroscopy and x-ray absorption spectroscopy (XAS) measurements have been performed on HfO 2 films grown on Si(0 0 1) for ULSI ultra-thin gate insulators to elucidate the chemistry and band offsets of interfacial silicate layers. The valence-band discontinuity is determined by subtracting valence-band spectra of H-terminated Si(0 0 1) from those of the HfO 2 films on Si which have a HfO 2 /Hf 1− x Si x O 2 /Si double layer structure. On the other hand, the conduction-band discontinuity is clearly deduced by oxygen K-edge absorption spectra and O 1s photoelectron spectra. Consequently, two kinds of energy-band offsets of HfO 2 /Hf 1− x Si x O 2 and Hf 1− x Si x O 2 /Si are determined separately.

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