High efficiency solid-state photovoltaic device due to inhibition of interface charge recombination

DOI PDF 被引用文献12件
  • Jessica Krüger
    Laboratoire de Photonic and Interfaces, Institut de Chimie Physique, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
  • Robert Plass
    Laboratoire de Photonic and Interfaces, Institut de Chimie Physique, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
  • Le Cevey
    Laboratoire de Photonic and Interfaces, Institut de Chimie Physique, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
  • Marco Piccirelli
    Laboratoire de Photonic and Interfaces, Institut de Chimie Physique, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
  • Michael Grätzel
    Laboratoire de Photonic and Interfaces, Institut de Chimie Physique, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
  • Udo Bach
    NTera Ltd., c/o G.S.K. Grangeroad, Rathfarnham, Dublin 16, Ireland

書誌事項

公開日
2001-09-24
DOI
  • 10.1063/1.1406148
公開者
AIP Publishing

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説明

<jats:p>The performance of solid-state dye-sensitized solar cells based on spiro-MeOTAD was considerably improved by controlling charge recombination across the interface of the heterojunction. This was achieved by blending the hole conductor matrix with a combination of 4-tert-butylpyridine (tBP) and Li[CF3SO2]2N. Open circuit voltages Uoc over 900 mV and short circuit currents Isc up to 5.1 mA were obtained, yielding an overall efficiency of 2.56% at AM1.5 illumination. These values have been fully confirmed at the National Renewable Energy Laboratories for a device with an active area of 1.07 cm2, signifying a dramatic improvement compared to previously reported values for a similar device.</jats:p>

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