Highly Efficient Organic Solar Cells Consisting of Double Bulk Heterojunction Layers
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- Jiang Huang
- State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Information University of Electronic Science and Technology of China (UESTC) Chengdu 610054 P. R. China
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- Hanyu Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Information University of Electronic Science and Technology of China (UESTC) Chengdu 610054 P. R. China
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- Kangrong Yan
- MOE Key Laboratory of Macromolecular Synthesis and Functionalization State Key Laboratory of Silicon Materials Department of Polymer Science and Engineering Zhejiang University Hangzhou 310027 P. R. China
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- Xiaohua Zhang
- State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Information University of Electronic Science and Technology of China (UESTC) Chengdu 610054 P. R. China
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- Hongzheng Chen
- MOE Key Laboratory of Macromolecular Synthesis and Functionalization State Key Laboratory of Silicon Materials Department of Polymer Science and Engineering Zhejiang University Hangzhou 310027 P. R. China
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- Chang‐Zhi Li
- MOE Key Laboratory of Macromolecular Synthesis and Functionalization State Key Laboratory of Silicon Materials Department of Polymer Science and Engineering Zhejiang University Hangzhou 310027 P. R. China
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- Junsheng Yu
- State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Information University of Electronic Science and Technology of China (UESTC) Chengdu 610054 P. R. China
書誌事項
- 公開日
- 2017-03-15
- 権利情報
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- http://onlinelibrary.wiley.com/termsAndConditions#vor
- DOI
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- 10.1002/adma.201606729
- 公開者
- Wiley
この論文をさがす
説明
<jats:p>An organic solar cell (OSCs) containing double bulk heterojunction (BHJ) layers, namely, double‐BHJ OSCs is constructed via stamp transferring of low bandgap BHJ atop of mediate bandgap active layers. Such devices allow a large gain in photocurrent to be obtained due to enhanced photoharvest, without suffering much from the fill factor drop usually seen in thick‐layer‐based devices. Overall, double‐BHJ OSC with optimal ≈50 nm near‐infrared PDPP3T:PC<jats:sub>71</jats:sub>BM layer atop of ≈200 nm PTB7‐Th:PC<jats:sub>71</jats:sub>BM BHJ results in high power conversion efficiencies over 12%.</jats:p>
収録刊行物
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- Advanced Materials
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Advanced Materials 29 (19), 1606729-, 2017-03-15
Wiley
