Quantized Anomalous Hall Effect in Magnetic Topological Insulators

  • Rui Yu
    Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
  • Wei Zhang
    Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
  • Hai-Jun Zhang
    Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
  • Shou-Cheng Zhang
    Department of Physics, McCullough Building, Stanford University, Stanford, CA 94305–4045, USA.
  • Xi Dai
    Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
  • Zhong Fang
    Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

説明

<jats:title>Quantum Anomalous Hall Effect</jats:title> <jats:p> In addition to the Hall effect, which appears as a voltage change in conductors in response to an external magnetic field, ferromagnets exhibit the anomalous Hall effect, which is often proportional to their magnetization and independent of the presence of the magnetic field. This effect, first observed more than a century ago, has not been realized in its quantized form. <jats:bold> Yu <jats:italic>et al.</jats:italic> </jats:bold> (p. <jats:related-article xmlns:xlink="http://www.w3.org/1999/xlink" ext-link-type="doi" page="61" related-article-type="in-this-issue" vol="329" xlink:href="10.1126/science.1187485">61</jats:related-article> , published online 3 June) propose a realization of a quantum anomalous Hall system by magnetically doping thin films of three-dimensional topological insulators and calculate the effects of various dopants and film thicknesses. The resulting insulators are predicted to have long-range ferromagnetic order, potentially joining dilute magnetic semiconductors as candidates for spintronic applications. </jats:p>

収録刊行物

  • Science

    Science 329 (5987), 61-64, 2010-07-02

    American Association for the Advancement of Science (AAAS)

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