Effect of misorientation angle of grain boundary on the interaction with Σ3 boundary at crystal/melt interface of multicrystalline silicon

Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Wolfram Miller, Kozo Fujiwara

doi:10.1016/j.mtla.2019.100357

Effect of misorientation angle of grain boundary on the interaction with Σ3 boundary at crystal/melt interface of multicrystalline silicon

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Abstract Interactions between Σ3 grain boundaries (GBs), small-angle GBs (SAGBs), and general GBs at a silicon crystal/melt interface are studied by in situ observation during directional solidification. The interactions exhibit a dependence on the misorientation angle. SAGBs can propagate through Σ3 GBs, but this behavior transitions into coalescence with Σ3s when the misorientation approaches the limit of a SAGB, i.e. 15°. On the other hand, general GBs show the ability to terminate Σ3 GBs continuously. The present findings suggest that the presence of intrinsic dislocations in GBs plays a role in GB interactions.

Effect of misorientation angle of grain boundary on the interaction with Σ3 boundary at crystal/melt interface of multicrystalline silicon

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Effect of misorientation angle of grain boundary on the interaction with Σ3 boundary at crystal/melt interface of multicrystalline silicon

この論文をさがす

説明

収録刊行物

被引用文献 (3)*注記

参考文献 (27)*注記

関連プロジェクト

詳細情報 詳細情報について

書き出し

問題の指摘

詳細情報詳細情報について