Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot
抄録
<jats:title>Abstract</jats:title><jats:p>Electrical tunability of the <jats:inline-formula><jats:alternatives><jats:tex-math>$$g$$</jats:tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>g</mml:mi></mml:math></jats:alternatives></jats:inline-formula>-factor of a confined spin is a long-time goal of the spin qubit field. Here we utilize the electric dipole spin resonance (EDSR) to demonstrate it in a gated GaAs double-dot device confining a hole. This tunability is a consequence of the strong spin-orbit interaction (SOI) in the GaAs valence band. The SOI enables a spin-flip interdot tunneling, which, in combination with the simple spin-conserving charge transport leads to the formation of tunable hybrid spin-orbit molecular states. EDSR is used to demonstrate that the gap separating the two lowest energy states changes its character from a charge-like to a spin-like excitation as a function of interdot detuning or magnetic field. In the spin-like regime, the gap can be characterized by the effective <jats:inline-formula><jats:alternatives><jats:tex-math>$$g$$</jats:tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>g</mml:mi></mml:math></jats:alternatives></jats:inline-formula>-factor, which differs from the bulk value owing to spin-charge hybridization, and can be tuned smoothly and sensitively by gate voltages.</jats:p>
収録刊行物
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- Communications Physics
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Communications Physics 2 (1), 2019-12-13
Springer Science and Business Media LLC