Cathodoluminescence scanning electron microscopy of semiconductors

DOI PDF 被引用文献18件
  • B. G. Yacobi
    Solar Energy Research Institute, Golden, Colorado 80401 (Present address: GTE Laboratories, Waltham, Massachusetts 02254)
  • D. B. Holt
    Department of Metallurgy and Materials Science, Imperial College of Science and Technology, University of London, London SW7 2BP, United Kingdom

書誌事項

公開日
1986-02-15
DOI
  • 10.1063/1.336491
公開者
AIP Publishing

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<jats:p>This paper reviews applications of cathodoluminescence scanning electron microscopy in the assessment of optical and electronic properties of semiconductors. The assessment includes, for example, information on band structure and impurity levels derived from spectroscopic cathodoluminescence, analysis of dopant concentrations at a level which is in some cases several orders of magnitude better than x-ray microanalysis, and mapping of carrier lifetimes and defects. Recent advances in both the various cathodoluminescence techniques and the processes leading to electron-beam-induced luminescence in semiconductors are reviewed. Possible future trends are also discussed.</jats:p>

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