Large‐Size Growth of Ultrathin SnS<sub>2</sub> Nanosheets and High Performance for Phototransistors

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  • Xing Zhou
    State Key Laboratory of Material Processing and Die & Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China
  • Qi Zhang
    State Key Laboratory of Material Processing and Die & Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China
  • Lin Gan
    State Key Laboratory of Material Processing and Die & Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China
  • Huiqiao Li
    State Key Laboratory of Material Processing and Die & Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China
  • Tianyou Zhai
    State Key Laboratory of Material Processing and Die & Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China

説明

<jats:p>2D SnS<jats:sub>2</jats:sub> nanosheets have been attracting intensive attention as one potential candidate for the modern electronic and/or optoelectronic fields. However, the controllable large‐size growth of ultrathin SnS<jats:sub>2</jats:sub> nanosheets still remains a great challenge and the photodetectors based on SnS<jats:sub>2</jats:sub> nanosheets suffer from low responsivity, thus hindering their further applications so far. Herein, an improved chemical vapor deposition route is provided to synthesize large‐size SnS<jats:sub>2</jats:sub> nanosheets, the side length of which can surpass 150 μm. Then, ultrathin SnS<jats:sub>2</jats:sub> nanosheet‐based phototransistors are fabricated, which achieve high photoresponsivities up to 261 A W<jats:sup>−1</jats:sup> (with a fast rising time of 20 ms and a falling time of 16 ms) in air and 722 A W<jats:sup>−1</jats:sup> in vacuum, respectively. Furthermore, the effects of back‐gate voltage and air adsorbates on the optoelectronic properties of the SnS<jats:sub>2</jats:sub> nanosheet have been systematically investigated. In addition, a high‐performance flexible photodetector based on SnS<jats:sub>2</jats:sub> nanosheet is also fabricated with a high responsivity of 34.6 A W<jats:sup>−1</jats:sup>.</jats:p>

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