Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors
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- Anoop S. Dhoot
- *Center for Polymers and Organic Solids, University of California, Santa Barbara, CA 93106; and
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- Jonathan D. Yuen
- *Center for Polymers and Organic Solids, University of California, Santa Barbara, CA 93106; and
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- Martin Heeney
- Merck Chemicals, Chilworth Science Park, Southampton SO16 7QD, United Kingdom
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- Iain McCulloch
- Merck Chemicals, Chilworth Science Park, Southampton SO16 7QD, United Kingdom
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- Daniel Moses
- *Center for Polymers and Organic Solids, University of California, Santa Barbara, CA 93106; and
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- Alan J. Heeger
- *Center for Polymers and Organic Solids, University of California, Santa Barbara, CA 93106; and
書誌事項
- 公開日
- 2006-08-08
- DOI
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- 10.1073/pnas.0605033103
- 公開者
- Proceedings of the National Academy of Sciences
この論文をさがす
説明
<jats:p> We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2- <jats:italic>b</jats:italic> ]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (10 <jats:sup>15</jats:sup> cm <jats:sup>−2</jats:sup> ) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 × 10 <jats:sup>6</jats:sup> A/cm <jats:sup>2</jats:sup> , and high metallic conductivities, 10 <jats:sup>4</jats:sup> S/cm, in the FET channel; at 4.2 K, the current density is sustained at 10 <jats:sup>7</jats:sup> A/cm <jats:sup>2</jats:sup> . Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is ≈3.5 cm <jats:sup>2</jats:sup> ·V <jats:sup>−1</jats:sup> ·s <jats:sup>−1</jats:sup> at 297 K, comparable with that found in fully crystalline organic devices. </jats:p>
収録刊行物
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- Proceedings of the National Academy of Sciences
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Proceedings of the National Academy of Sciences 103 (32), 11834-11837, 2006-08-08
Proceedings of the National Academy of Sciences