High spatial resolution quantitative microwave impedance microscopy by a scanning tip microwave near-field microscope

DOI PDF 被引用文献7件
  • Chen Gao
    Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
  • Tao Wei
    Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
  • Fred Duewer
    Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
  • Yalin Lu
    Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
  • X.-D. Xiang
    Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

書誌事項

公開日
1997-09-29
DOI
  • 10.1063/1.120444
公開者
AIP Publishing

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説明

<jats:p>A recently developed scanning tip microwave near-field microscope has been improved to achieve a spatial resolution of 100 nm (∼λ/106). Furthermore, explicit calculations of the field distribution using a simplified model allow quantitative microscopy of dielectric properties for dielectric materials. A detection sensitivity of δε/ε∼6×10−4 has been achieved.</jats:p>

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