Flux dependence of sputtering yield for C and B4C by high flux neutral beam

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書誌事項

公開日
1995-04
権利情報
  • https://www.elsevier.com/tdm/userlicense/1.0/
DOI
  • 10.1016/0022-3115(94)00604-0
公開者
Elsevier BV

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説明

The sputtering yields of isotropic graphite PD330S and conversion B 4 C irradiated by high flux neutral beam have been investigated. The specification of the beam is as follows: deuterium flux from 2 × 10 21 to 1 × 10 22 /m 2 s with 9% of oxygen and acceleration energy of 5 keV. The samples are irradiated at a normal incidence in the temperature range from 520 to 1070 K. For a flux of 1 × 10 22 /m 2 s, the chemical sputtering yield of PD330S is suppressed in comparison with previous data for low flux beam irradiation experiments and a local peak of sputtering yield appears between 870 and 970 K. Moreover as the incident flux is increased, the sputtering yield at 770 K has a large variation and a maximum value in 5 × 10 21 /m 2 s for PD330S. The sputtering yield of conversion B 4 C is 50 ∼ 60% smaller than that of PD330S at a temperature of 970 K

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